BUV42 silicon npn switching transistor sgs-thomson preferred salestype fast switching times low switching losses very low saturation voltage and high gain for reduced load operation internal schematic diagram october 1995 1 2 to-3 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 350 v v ceo collector-emitter voltage (i b = 0) 250 v v ebo emitter-base voltage (i c =0) 7 v i c collector current 12 a i cm collector peak current 18 a i b base current 2.5 a i bm base peak current 4 a p bas e reverse bias base dissipation (b.e. junction in avalanche) 1a p tot total dissipation at t case 25 o c 120 w t stg storage temperature -65 to 200 o c t j max operating junction temperature 200 o c 1/5
thermal data r thj-case thermal resistance junction-case max 1.46 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be =10 w ) v ce =v cev v ce =v cev t c =100 o c 0.5 2.5 ma ma i cev collector cut-off current v ce =v cev v be =-1.5v v ce =v cev v be =-1.5vt c =100 o c 0.5 2 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c =0.2a l=25mh 250 v v eb0 emitter-base voltage (i c =0) i e =50ma 7 v v ce(sat) * collector-emitter saturation voltage i c =2a i b = 0.13a i c =4a i b =0.4a i c =6a i b = 0.75a i c =2a i b = 0.13a t j = 100 o c i c =4a i b =0.4a t j =100 o c i c =6a i b = 0.75a t j = 100 o c 0.25 0.4 0.5 0.25 0.45 0.6 0.8 0.9 1.2 0.9 1.2 1.5 v v v v v v v be(sat) * base-emitter saturation voltage i c =4a i b =0.4a i c =6a i b = 0.75a i c =4a i b =0.4a t j =100 o c i c =6a i b = 0.75a t j = 100 o c 1 1.1 0.9 1.1 1.3 1.5 1.3 1.5 v v v v di c /d t * rated of rise of on-state collector current v cc =200v r c =0 i b1 = 0.6a t j =25 o c t j =100 o c 25 20 40 35 a/ m s a/ m s v ce(2 m s) collector emitter dynamic voltage v cc =200v i b1 =0.4a r c =50 w t j =25 o c t j =100 o c 1.7 2.5 2.5 4 v v v ce(4 m s) collector emitter dynamic voltage vcc = 200v i b1 =0.4a r c =50 w t j =25 o c t j =100 o c 0.9 1.1 1.7 2 v v * pulsed: pulse duration = 300 m s, duty cycle = 2 % BUV42 2/5
electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit t r t s t f resistive load rise time storage time fall time v cc =200v i c =6a v bb =-5v i b1 =0.75a r b2 =3.3 w t p =30 m s 0.3 1 0.15 0.4 1.6 0.3 m s m s m s t s t f t t t c inductive load storage time fall time tail time in turn-on crossover time v cc =200v v clamp = 250v i cc =4a i b =0.4a v bb =-5v r b2 =6.3 w l c =2.5mh 1.2 0.08 0.03 0.15 1.8 0.2 0.12 0.35 m s m s m s m s t s t f t t t c storage time fall time tail time in turn-on crossover time vcc = 200v v clamp = 250v i cc =4a i b =0.4a v bb =-5v r b2 =6.3 w l c =2.5mh t j =100 o c 1.8 0.2 0.08 0.4 2.4 0.4 0.2 0.7 m s m s m s m s t s t f t t storage time fall time tail time in turn-on v cc =200v v clamp = 250v i cc =4a i b =0.5a v bb =0 r b2 =7.5 w l c =2.5mh 2.5 0.4 0.15 m s m s m s t s t f t t storage time fall time tail time in turn-on v cc =200v v clamp = 250v i cc =4a i b =0.4a v bb =0 r b2 =7.5 w l c =2.5mh t j =100 o c 4.8 0.7 0.4 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle = 2% BUV42 3/5
dim. mm inch min. typ. max. min. typ. max. a 11.7 0.460 b 0.96 1.10 0.037 0.043 c 1.70 0.066 d 8.7 0.342 e 20.0 0.787 g 10.9 0.429 n 16.9 0.665 p 26.2 1.031 r 3.88 4.09 0.152 0.161 u 39.50 1.555 v 30.10 1.185 e b r c d a p g n v u o p003n to-3 (h) mechanical data BUV42 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany- hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a .. . BUV42 5/5
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